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| GM BT8550 Description Package Dimensions 1/2 P N P E PI TA XI A L T RA N SI STO R The GMBT8550 is designed for general purpose amplifier applications. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -25 -20 -5 -700 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE fT Cob at Ta = 25 : Min. -25 -20 -5 100 150 Typ. Max. -1 -100 -500 -1 500 10 MHz pF Unit V V V uA nA mV V IC=-10uA IC=-1mA IE=-10uA VCB=-20V VEB=-6V IC=-500mA, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-150mA VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz Test Conditions Classification Of hFE Rank hFE B9C 100 - 200 B9D 150 - 300 B9E 250 - 500 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 |
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